wpm148 7 single p - channel, - 12 v, - 3.5 a, power mosfet descriptions the WPM1487 is p - channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc - dc conversion , p ower switch and charging circuit . standard product wpm148 7 is pb - free and halogen - free . features ? trench technology ? supper high density cell design ? e xcellent on resistance for higher dc current ? extremely low threshold voltage ? small package sot - 23 - 3l applications ? driver for relay, solenoid, motor, led etc. ? dc - dc converter circuit ? power switch ? load switch ? charging pin c onfiguration (top view) marking order i nformation device package shipping wpm148 7 - 3 /tr sot - 23 - 3l 3000 /reel&tape v ds (v) rds(on) ( ) - 12 0.032 @ v gs = C 4.5v 0.046 @ v gs = C 2.5v 0.071 @ v gs = C 1.8v d 3 gs 1 2 w17n 3 2 1 w = willsemi 17=device code n = month (a~z) sot23 - 3l 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings thermal resistance ratings a surface mounted on fr - 4 board using 1 square inch pad size, 1oz copper b surface mounted on fr - 4 bo ard using minimum pad size, 1oz copper c pulse width <38 0s, duty cycle <2 % d maximum junction temperature t j =1 50 c . parameter symbol 10 s steady state unit drain - source voltage v ds - 12 v gate - source voltage v gs 12 continuous drain current a t a =25c i d - 3. 5 - 3.0 a t a =70c - 2. 7 - 2. 5 maximum power dissipation a t a =25c p d 1.0 0.8 w t a =70c 0.6 0.5 continuous drain current b t a =25c i d - 3.0 - 2. 7 a t a =70c - 2. 5 - 2. 2 maximum power dissipation b t a =25c p d 0. 8 0.6 w t a =70c 0.5 0.4 pulsed drain current c i dm - 10 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg - 55 to 150 c parameter symbol typical maximum unit junction - to - ambient thermal resistance a t 10 s r ja 10 0 1 25 c/w steady state 1 15 15 0 junction - to - ambient thermal resistance b t 10 s r ja 1 25 1 55 steady state 14 0 1 85 junction - to - case thermal resistance steady state r jc 60 75 wpm148 7 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c , unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain - to - source breakdown voltage b v dss v gs = 0 v, i d = - 250 u a - 12 v zero gate voltage drain current i dss v ds = - 12 v, v gs = 0v - 1 ua gate - t o - s ource leakage current i gss v ds = 0 v, v gs = 12 v 10 0 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = - 2 5 0 u a - 0.4 5 - 0.75 - 0. 85 v drain - t o - s ource on - r esistance b, c r ds(on) v gs = - 4 .5 v , i d = - 3.5 a 3 2 40 m? v gs = - 2 .5 v , i d = - 3.0 a 4 6 6 0 v gs = - 1.8v , i d = - 2.0 a 71 90 forward transconductance g fs v ds = - 5.0 v, i d = - 2.0 a 7.8 s capacitances , charges input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = - 1 0 v 1224 pf output capacitance c oss 1 82.6 reverse transfer capacitance c rss 17 4 total gate charge q g(tot) v gs = - 4.5 v, v ds = - 10 v, i d = - 3. 5 a 27.3 nc threshold gate charge q g(th) 1 4.2 gate - to - source charge q gs 1.4 gate - to - drain charge q gd 5.0 switching characteristics turn - on delay time td(on) v gs = - 4.5 v, v d d = - 10 v, i d = - 3.5 a , r g =6 ? 74 ns rise time tr 18.8 turn - off delay time td(off) 62 fall time tf 38 body diode characteristics forward voltage v sd v gs = 0 v, i s = - 1.0 a - 0.7 8 - 1.5 v wpm148 7 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
r ds(on) -on resistance ( m ) 2 4 6 8 10 12 14 20 40 60 80 100 120 140 160 r ds(on) -on resistance ( m ) -i ds - drain to source current(a) vgs=-1.8v vgs=-2.5v vgs=-4.5v -50 -25 0 25 50 75 100 125 150 20 25 30 35 40 45 v gs =-4.5v i d r ds(on) -on resistance ( m ) temperature ( 0 c ) -50 -25 0 25 50 75 100 125 150 0.4 0.5 0.6 0.7 0.6 0.8 0. i d =-250ua -v th - gate threshold voltage(v) temperature ( 0 c ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2 4 6 8 10 vgs=-1.5v vgs=-1.8v vgs=-2.5v vgs=-4.0v vgs=-4.5v -v ds - drain to source voltage(v) - i d -drain current (a) 0.0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 -i d -drain current(a) -v gs - gate to source voltage(v) t=-50 o c t=25 o c t=125 o c typical characteristics (ta=25 c, unless otherwise noted) output c haracteristics on - r esistance vs. d rain c urrent on - resistance vs. junction temperature transfer c haracteristics on - resistance vs. gate - to - source voltage th reshold voltage vs. temperature =-3.5a d 180 160 i = - 3.5a 140 120 100 80 60 40 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -v gs - gate to source voltage(v) 9 wpm148 7 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0 2 4 6 8 10 200 400 600 800 1000 v gs =0v f=1mhz c-capacitance(pf) -v ds -drain to source voltage(v) crss ciss coss 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10 -i sd -source to drain current(a) -v sd -source-to drain voltage(v) t=25 o c t=150 o c 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ds =-10v,i d =-3.5a -v gs - gate to source voltage(v) - qg (nc) capacitance single pulse power body diode forward voltage safe operating power gate charge characteristics 100 limited by r ds(on) 10 100 s 1 m s 1 10 ms 100 ms 0.1 0.01 t a = 25 c single pulse bvdss limited 1 s , 1 0 s 100 s, dc 0.1 1 10 100 -v ds -drain to source voltage(v) -v ds -drain to source voltage(v) -v ds -drain to source voltage(v) time(s) power(w) - i d -drain current (a) 1e-3 0.01 0.1 1 10 100 10 20 30 40 wpm148 7 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
tran sient thermal r esponse (junction - to - ambient) thja normalized e f fective t ransient thermal impedance 1 duty cycle = 0.5 0.2 0.1 0.1 0.05 notes: p dm 0.02 t 1 t 2 t 1. duty cycle, d = 1 t 2 0.01 1 0 - 4 single pulse 1 0 - 3 1 0 - 2 1 0 - 1 1 10 2. per unit base = r thjf =115 c / w 3. t jm - t a = p dm z (t) 4. surface mounted 100 1000 square w ave pulse duration (s) wpm148 7 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot - 23 - 3l symbol dimensions in millimeter min. typ. ma x. a - - 1.25 a1 0 - 0.15 a2 1.00 1.10 1.20 a3 0.60 0.65 0.70 d 2.826 2.926 3.026 e 2.60 2.80 3.00 e1 1.526 1.626 1.726 e 0.90 0.95 1.00 e1 1.80 1.90 2.00 l 0.35 0.45 0.60 l1 0.59ref l2 0.25bsc r 0.05 - - r1 0.05 - 0.20 0 - 8 1 3 5 7 2 6 - 14 wpm148 7 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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